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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IQE036N08NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
3,441 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB075N04LGATMA1MOSFET N-CH 40V 50A D2PAK Infineon Technologies |
3,240 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2V @ 20µA | 36 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRFHM9331TR2PBFMOSFET P-CH 30V 11A 3X3 PQFN Infineon Technologies |
3,541 | - |
|
Datasheet |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 24A (Tc) | - | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48 nC @ 10 V | - | 1543 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
|
IRFH7914TRPBFMOSFET N-CH 30V 15A/35A 8PQFN Infineon Technologies |
2,986 | - |
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Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1160 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRFR6215CPBFMOSFET P-CH 150V 13A DPAK Infineon Technologies |
3,118 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | - | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | - | 860 pF @ 25 V | - | 110W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPI070N08N3 GMOSFET N-CH 80V 80A TO262-3 Infineon Technologies |
2,882 | - |
|
Datasheet |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRF1010NLPBFMOSFET N-CH 55V 85A TO262 Infineon Technologies |
3,691 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF3709STRLMOSFET N-CH 30V 90A D2PAK Infineon Technologies |
4,735 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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94-3250MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies |
4,601 | - |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26 nC @ 4.5 V | ±12V | 2270 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MQ |
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IRF6608MOSFET N-CH 30V 13A DIRECTFET Infineon Technologies |
3,799 | - |
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Datasheet |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 24 nC @ 4.5 V | ±12V | 2120 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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