制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IPB70P04P409ATMA1MOSFET N-CH 40V 72A D2PAK Infineon Technologies |
2,548 | - |
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![]() Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 72A (Tc) | 10V | 9.1mOhm @ 70A, 10V | 4V @ 120µA | 70 nC @ 10 V | ±20V | 4810 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPB70P04P409ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
3,679 | - |
|
![]() Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 72A (Tc) | 10V | 9.1mOhm @ 70A, 10V | 4V @ 120µA | 70 nC @ 10 V | ±20V | 4810 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRLU3714ZMOSFET N-CH 20V 37A I-PAK Infineon Technologies |
2,748 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1 nC @ 4.5 V | ±20V | 560 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRF3205ZLPBFMOSFET N-CH 55V 75A TO262 Infineon Technologies |
3,706 | - |
|
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFZ34NSTRRMOSFET N-CH 55V 29A D2PAK Infineon Technologies |
4,306 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFI9Z24NMOSFET P-CH 55V 9.5A TO220AB FP Infineon Technologies |
3,375 | - |
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![]() Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 9.5A (Tc) | 10V | 175mOhm @ 5.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 29W (Tc) | - | - | - | Through Hole | TO-220AB Full-Pak |
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AUIRFS3607MOSFET N-CH 75V 80A D2PAK Infineon Technologies |
4,001 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF7807D1TRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,816 | - |
|
![]() Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7807VD1TRPBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,483 | - |
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FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSP318SH6327XTSA1MOSFET N-CH 60V 2.6A SOT223-4 Infineon Technologies |
4,496 | - |
|
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Tj) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | ±20V | 380 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |