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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPP80N06S2-H5MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,882 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | Through Hole | 4V @ 230µA | 155 nC @ 10 V | 55 V | ±20V | 5500 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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SPP80N06S2L-H5MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
4,382 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | Through Hole | 2V @ 230µA | 190 nC @ 10 V | 55 V | ±20V | 6640 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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IRF6215STRRPBFMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
2,093 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | Surface Mount | 4V @ 250µA | 66 nC @ 10 V | 150 V | ±20V | 860 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) |
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IRFH7923TRPBFMOSFET N-CH 30V 15A PQFN56 Infineon Technologies |
2,171 | - |
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Datasheet |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 33A (Tc) | - | 8.7mOhm @ 15A, 10V | Surface Mount | 2.35V @ 25µA | 13 nC @ 4.5 V | 30 V | - | 1095 pF @ 15 V | - | - | PQFN (5x6) Single Die | - | - | - |
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IPLK70R2K0P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
4,540 | - |
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Datasheet |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 700 V | - | - | - | - | PG-TDSON-8 | - | - | - |
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IRF3711ZCSMOSFET N-CH 20V 92A D2PAK Infineon Technologies |
4,938 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | Surface Mount | 2.45V @ 250µA | 24 nC @ 4.5 V | 20 V | ±20V | 2150 pF @ 10 V | - | - | D2PAK | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
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94-2335MOSFET N-CH 55V 28A DPAK Infineon Technologies |
2,296 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | Surface Mount | 2V @ 250µA | 25 nC @ 5 V | 55 V | ±16V | 880 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
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IRLU2705MOSFET N-CH 55V 28A I-PAK Infineon Technologies |
3,668 | - |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | Through Hole | 2V @ 250µA | 25 nC @ 5 V | 55 V | ±16V | 880 pF @ 25 V | - | - | IPAK | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
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IRF7495TRMOSFET N-CH 100V 7.3A 8SO Infineon Technologies |
2,870 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | Surface Mount | 4V @ 250µA | 51 nC @ 10 V | 100 V | ±20V | 1530 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRFB3507PBFMOSFET N-CH 75V 97A TO220AB Infineon Technologies |
2,623 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | Through Hole | 4V @ 100µA | 130 nC @ 10 V | 75 V | ±20V | 3540 pF @ 50 V | - | - | TO-220AB | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
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