| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BTS244Z E3062AMOSFET N-CH 55V 35A TO220-5-62 Infineon Technologies |
3,656 | - |
|
Datasheet |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | Surface Mount | 2V @ 130µA | 130 nC @ 10 V | 55 V | ±20V | 2660 pF @ 25 V | - | Temperature Sensing Diode | PG-TO220-5-62 | - | 170W (Tc) | -40°C ~ 175°C (TJ) |
|
IPA60R190E6XKSA1MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies |
2,165 | - |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | Through Hole | 3.5V @ 630µA | 63 nC @ 10 V | 600 V | ±20V | 1400 pF @ 100 V | - | - | PG-TO220-FP | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
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IRF1104STRRMOSFET N-CH 40V 100A D2PAK Infineon Technologies |
3,614 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | Surface Mount | 4V @ 250µA | 93 nC @ 10 V | 40 V | ±20V | 2900 pF @ 25 V | - | - | D2PAK | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) |
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IRFR120NTRLPBFMOSFET N-CH 100V 9.4A DPAK Infineon Technologies |
19 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | Surface Mount | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | PG-TO252-3 | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
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IPD068P03L3GBTMA1MOSFET P-CH 30V 70A TO252-3 Infineon Technologies |
2,533 | - |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 6.8mOhm @ 70A, 10V | Surface Mount | 2V @ 150µA | 91 nC @ 10 V | 30 V | ±20V | 7720 pF @ 15 V | - | - | PG-TO252-3 | - | 100W (Tc) | -55°C ~ 155°C (TJ) |
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IPP037N08N3GHKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
4,276 | - |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | Through Hole | 3.5V @ 155µA | 117 nC @ 10 V | 80 V | ±20V | 8110 pF @ 40 V | - | - | PG-TO220-3 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
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IRFZ44NSTRRMOSFET N-CH 55V 49A D2PAK Infineon Technologies |
3,200 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 55 V | ±20V | 1470 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) |
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SPA11N60CFDXKSA1MOSFET N-CH 600V 11A TO220-3 Infineon Technologies |
4,328 | - |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | Through Hole | 5V @ 1.9mA | 64 nC @ 10 V | 600 V | ±20V | 1200 pF @ 25 V | - | - | PG-TO220-3-31 | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFZ34EMOSFET N-CH 60V 28A TO220AB Infineon Technologies |
2,281 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 42mOhm @ 17A, 10V | Through Hole | 4V @ 250µA | 30 nC @ 10 V | 60 V | ±20V | 680 pF @ 25 V | - | - | TO-220AB | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
IRL520NSMOSFET N-CH 100V 10A D2PAK Infineon Technologies |
3,266 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 5 V | 100 V | ±16V | 440 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) |





