制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IPD50P04P4L11ATMA1MOSFET P-CH 40V 50A TO252-3 Infineon Technologies |
2 | - |
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OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 50A, 10V | 2.2V @ 85µA | 59 nC @ 10 V | +5V, -16V | 3900 pF @ 25 V | - | 58W (Tc) | -55°C ~ 155°C (TJ) | Automotive | - | Surface Mount | PG-TO252-3-313 |
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IRF3711ZMOSFET N-CH 20V 92A TO220AB Infineon Technologies |
2,232 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24 nC @ 4.5 V | ±20V | 2150 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPL65R165CFDAUMA2MOSFET N-CH 650V 21.3A 4VSON Infineon Technologies |
4,663 | - |
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CoolMOS™ CFD2 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.3A (Tc) | 10V | 165mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IRF6644TR1MOSFET N-CH 100V 10.3A DIRECTFET Infineon Technologies |
3,499 | - |
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HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
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IRFP4227PBFXKMA1TRENCH >=200V Infineon Technologies |
4,382 | - |
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- |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 25mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | ITO-220AB |
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IPB049N06L3GATMA1MOSFET N-CH 60V 80A D2PAK Infineon Technologies |
4,079 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 58µA | 50 nC @ 4.5 V | ±20V | 8400 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFH7934TR2PBFMOSFET N-CH 30V 24A 5X6 PQFN Infineon Technologies |
2,059 | - |
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- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 76A (Tc) | - | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | - | 3100 pF @ 15 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRF7464MOSFET N-CH 200V 1.2A 8SO Infineon Technologies |
3,803 | - |
|
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7468MOSFET N-CH 40V 9.4A 8SO Infineon Technologies |
2,541 | - |
|
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34 nC @ 4.5 V | ±12V | 2460 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7807VD2MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
2,298 | - |
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FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |