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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7492MOSFET N-CH 200V 3.7A 8SO Infineon Technologies |
3,108 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF3515STRLMOSFET N-CH 150V 41A D2PAK Infineon Technologies |
4,797 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF6215MOSFET P-CH 150V 13A TO220AB Infineon Technologies |
2,949 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL8113MOSFET N-CH 30V 105A TO220AB Infineon Technologies |
2,967 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35 nC @ 4.5 V | ±20V | 2840 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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ISC007N06NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
2,768 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD90R1K2C3BTMA1MOSFET N-CH 900V 5.1A TO252-3 Infineon Technologies |
3,363 | - |
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Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRF7809AMOSFET N-CH 30V 14.5A 8SO Infineon Technologies |
3,444 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V | 8.5mOhm @ 15A, 4.5V | 1V @ 250µA | 75 nC @ 5 V | ±12V | 7300 pF @ 16 V | - | 2.5W (Ta) | - | - | - | Surface Mount | 8-SO |
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IRF7353D2MOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
3,503 | - |
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Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRL3402MOSFET N-CH 20V 85A TO220AB Infineon Technologies |
4,400 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | ±10V | 3300 pF @ 15 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IPC218N04N3X1SA1MOSFET N-CH 40V 2A SAWN ON FOIL Infineon Technologies |
4,452 | - |
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Datasheet |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 2A (Tj) | 10V | 50mOhm @ 2A, 10V | 4V @ 200µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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