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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP05CN10NGXKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
4,481 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | 4V @ 250µA | 181 nC @ 10 V | ±20V | 12000 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRLI540NMOSFET N-CH 100V 23A TO220AB FP Infineon Technologies |
2,820 | - |
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Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 4V, 10V | 44mOhm @ 12A, 10V | 2V @ 250µA | 74 nC @ 5 V | ±16V | 1800 pF @ 25 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRF3205ZLMOSFET N-CH 55V 75A TO262 Infineon Technologies |
2,134 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFB41N15DMOSFET N-CH 150V 41A TO220AB Infineon Technologies |
3,277 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±30V | 2520 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRFS3107MOSFET N-CH 75V 195A D2PAK Infineon Technologies |
2,579 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9370 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFZ48VSMOSFET N-CH 60V 72A D2PAK Infineon Technologies |
3,689 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 72A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1985 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRL3103D1PBFMOSFET N-CH 30V 64A TO220AB Infineon Technologies |
3,821 | - |
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Datasheet |
FETKY™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43 nC @ 4.5 V | ±16V | 1900 pF @ 25 V | - | 2W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SPP20N60C3HKSA1MOSFET N-CH 600V 20.7A TO220-3 Infineon Technologies |
4,975 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPI20N60C3HKSA1MOSFET N-CH 600V 20.7A TO262-3 Infineon Technologies |
2,935 | - |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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GS61004B-TRGS61004B-TR Infineon Technologies Canada Inc. |
3,753 | - |
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- | 3-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 45A (Tc) | 6V | 20mOhm @ 13.5A, 6V | 1.3V @ 7mA | 6.2 nC @ 6 V | +7V, -10V | 295 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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