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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB180P04P403ATMA1MOSFET P-CH 40V 180A TO263-7 Infineon Technologies |
4,379 | - |
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Datasheet |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 410µA | 250 nC @ 10 V | ±20V | 17640 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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IRFB7430GPBFMOSFET N CH 40V 195A TO220AB Infineon Technologies |
3,337 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
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IRLR8103MOSFET N-CH 30V 89A D-PAK Infineon Technologies |
4,803 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50 nC @ 5 V | ±20V | - | - | 89W (Ta) | - | - | - | Surface Mount | TO-252AA (DPAK) |
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SPD30P06PMOSFET P-CH 60V 30A TO252-3 Infineon Technologies |
3,002 | - |
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Datasheet |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48 nC @ 10 V | ±20V | 1535 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRF640NLPBFMOSFET N-CH 200V 18A TO262 Infineon Technologies |
4,600 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1160 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPB035N12NM6ATMA1TRENCH >=100V Infineon Technologies |
2,176 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRL3803STRLMOSFET N-CH 30V 140A D2PAK Infineon Technologies |
2,896 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPB05CN10N GMOSFET N-CH 100V 100A D2PAK Infineon Technologies |
3,294 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 250µA | 181 nC @ 10 V | ±20V | 12000 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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GS-065-008-1-L-TRGS-065-008-1-L-TR Infineon Technologies Canada Inc. |
4,810 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 8A (Tc) | 6V | 225mOhm @ 2.2A, 6V | 1.4V @ 1.74mA | 1.5 nC @ 6 V | +7V, -10V | 52 pF @ 400 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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SPP20N60S5MOSFET N-CH 650V 20A TO220-3 Infineon Technologies |
4,494 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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