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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP4004PBFMOSFET N-CH 40V 195A TO247AC Infineon Technologies |
3,624 | - |
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Datasheet |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.7mOhm @ 195A, 10V | Through Hole | 4V @ 250µA | 330 nC @ 10 V | 40 V | ±20V | 8920 pF @ 25 V | - | - | TO-247AC | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
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IRF150P220XKMA1MOSFET N-CH 150V 203A TO247-3 Infineon Technologies |
2,914 | - |
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Datasheet |
StrongIRFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 203A (Tc) | 10V | 2.7mOhm @ 100A, 10V | Through Hole | 4.6V @ 265µA | 200 nC @ 10 V | 150 V | ±20V | 12000 pF @ 75 V | - | - | PG-TO247-3 | - | 556W (Tc) | -55°C ~ 175°C |
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IPW65R080CFDFKSA1MOSFET N-CH 700V 43.3A TO247-3 Infineon Technologies |
4,727 | - |
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Datasheet |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | Through Hole | 4.5V @ 1.76mA | 170 nC @ 10 V | 700 V | ±20V | 5030 pF @ 100 V | - | - | PG-TO247-3-1 | - | 391W (Tc) | -55°C ~ 150°C (TJ) |
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IRLI3803MOSFET N-CH 30V 76A TO220AB FP Infineon Technologies |
4,197 | - |
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Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 76A (Tc) | 4.5V, 10V | 6mOhm @ 40A, 10V | Through Hole | 1V @ 250µA | 140 nC @ 4.5 V | 30 V | ±16V | 5000 pF @ 25 V | - | - | PG-TO220-FP | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
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IRLBL1304MOSFET N-CH 40V 185A SUPER D2PAK Infineon Technologies |
3,186 | - |
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Datasheet |
HEXFET® | Super D2-Pak | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 185A (Tc) | 4.5V, 10V | 4.5mOhm @ 110A, 10V | Surface Mount | 1V @ 250µA | 140 nC @ 4.5 V | 40 V | ±16V | 7660 pF @ 25 V | - | - | SUPER D2-PAK | - | 300W (Tc) | - |
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IRLML6402TRMOSFET P-CH 20V 3.7A SOT-23 Infineon Technologies |
2,301 | - |
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Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.7A (Ta) | - | 65mOhm @ 3.7A, 4.5V | Surface Mount | 1.2V @ 250µA | 12 nC @ 5 V | 20 V | - | 633 pF @ 10 V | - | - | Micro3™/SOT-23 | - | - | - |
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GS-065-030-2-L-TRGS-065-030-2-L-TR Infineon Technologies Canada Inc. |
3,602 | - |
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- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 30A (Tc) | 6V | 68mOhm @ 5.5A, 6V | Surface Mount | 2.6V @ 7.5mA | 6.7 nC @ 6 V | 650 V | +7V, -10V | 235 pF @ 400 V | - | - | 8-PDFN (8x8) | - | - | -55°C ~ 150°C (TJ) |
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IPB015N04LGATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
4,184 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | Surface Mount | 2V @ 200µA | 346 nC @ 10 V | 40 V | ±20V | 28000 pF @ 25 V | - | - | PG-TO263-3 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
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GS-065-030-6-LR-TRGS-065-030-6-LR-TR Infineon Technologies Canada Inc. |
2,113 | - |
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- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 40A (Tc) | 6V | 54mOhm @ 5.5A, 6V | Surface Mount | 2.6V @ 7.5mA | 6.7 nC @ 6 V | 700 V | +7V, -10V | 235 pF @ 400 V | - | - | 8-PDFN (8x8) | - | - | -55°C ~ 150°C (TJ) |
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AUIRFS4310ZTRLMOSFET N-CH 100V 120A D2PAK Infineon Technologies |
3,723 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | Surface Mount | 4V @ 150µA | 170 nC @ 10 V | 100 V | ±20V | 6860 pF @ 50 V | - | - | D2PAK | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
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