| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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IPB240N03S4LR8ATMA1MOSFET N-CH 30V 240A TO263-7 Infineon Technologies |
2,065 | - |
|
Datasheet |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | 4.5V, 10V | 0.76mOhm @ 100A, 10V | Surface Mount | 2.2V @ 230µA | 380 nC @ 10 V | 30 V | ±16V | 26000 pF @ 25 V | AEC-Q101 | - | PG-TO263-7-3 | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
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IPB120N08S403ATMA1MOSFET N-CH 80V 120A TO263-3 Infineon Technologies |
2,899 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | Surface Mount | 4V @ 223µA | 167 nC @ 10 V | 80 V | ±20V | 11550 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 278W (Tc) | -55°C ~ 175°C (TJ) |
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IPB180N04S302ATMA1MOSFET N-CH 40V 180A TO263-7 Infineon Technologies |
3,295 | - |
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Datasheet |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 1.5mOhm @ 80A, 10V | Surface Mount | 4V @ 230µA | 210 nC @ 10 V | 40 V | ±20V | 14300 pF @ 25 V | - | - | PG-TO263-7-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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IRFP3703MOSFET N-CH 30V 210A TO247AC Infineon Technologies |
2,775 | - |
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Datasheet |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | Through Hole | 4V @ 250µA | 209 nC @ 10 V | 30 V | ±20V | 8250 pF @ 25 V | - | - | TO-247AC | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) |
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IPZ60R070P6FKSA1MOSFET N-CH 600V 53.5A TO247-4 Infineon Technologies |
2,626 | - |
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Datasheet |
CoolMOS™ P6 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | Through Hole | 4.5V @ 1.72mA | 100 nC @ 10 V | 600 V | ±20V | 4750 pF @ 100 V | - | - | PG-TO247-4 | - | 391W (Tc) | -55°C ~ 150°C (TJ) |
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IRLML2502TRMOSFET N-CH 20V 4.2A SOT-23 Infineon Technologies |
3,387 | - |
|
Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | Surface Mount | 1.2V @ 250µA | 12 nC @ 5 V | 20 V | ±12V | 740 pF @ 15 V | - | - | SOT-23-3 (TO-236) | - | 1.25W (Ta) | -55°C ~ 155°C (TJ) |
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SIPC26N80C3MOSFET COOL MOS 600V SAWED WAFER Infineon Technologies |
3,088 | - |
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Datasheet |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRF5210STRLMOSFET P-CH 100V 38A D2PAK Infineon Technologies |
2,359 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | Surface Mount | 4V @ 250µA | 230 nC @ 10 V | 100 V | ±20V | 2780 pF @ 25 V | - | - | D2PAK | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) |
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AIMZHN120R060M1TXKSA1SIC_DISCRETE Infineon Technologies |
2,600 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 38A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | Through Hole | 5.1V @ 4.3mA | 32 nC @ 20 V | 1200 V | +23V, -5V | 880 pF @ 800 V | AEC-Q101 | - | PG-TO247-4-14 | Automotive | 197W (Tc) | -55°C ~ 175°C (TJ) |
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GS66502B-TRGS66502B-TR Infineon Technologies Canada Inc. |
2,299 | - |
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- |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7.5A (Tc) | 6V | 260mOhm @ 2.25A, 6V | Surface Mount | 2.6V @ 1.75mA | 1.6 nC @ 6 V | 650 V | +7V, -10V | 60 pF @ 400 V | - | - | - | - | - | -55°C ~ 150°C (TJ) |





