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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GS66506T-TRGS66506T-TR Infineon Technologies Canada Inc. |
4,174 | - |
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- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 22.5A (Tc) | 6V | 90mOhm @ 6.7A, 6V | 1.3V @ 5mA | 4.4 nC @ 6 V | +7V, -10V | 195 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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IRLMS2002TRMOSFET N-CH 20V 6.5A 6-TSOP Infineon Technologies |
3,617 | - |
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Datasheet |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | - | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | - | 1310 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro6™(SOT23-6) |
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IRFPS3810MOSFET N-CH 100V 170A SUPER247 Infineon Technologies |
4,214 | - |
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Datasheet |
HEXFET® | TO-274AA | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6790 pF @ 25 V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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AUIRFS8407-7PMOSFET N-CH 40V 240A D2PAK-7 Infineon Technologies |
4 | - |
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Datasheet |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
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BTS121AE3045ANTMA1MOSFET N CH 100V 22A TO-220AB Infineon Technologies |
4,991 | - |
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Datasheet |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | - | ±10V | 1500 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
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IPQC65R017CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
2,946 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 136A (Tc) | 10V | 17mOhm @ 61.6A, 10V | 4.5V @ 3.08mA | 236 nC @ 10 V | ±20V | 12338 pF @ 400 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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AIMZHN120R030M1TXKSA1SIC_DISCRETE Infineon Technologies |
2,165 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 69A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +23V, -5V | 1738 pF @ 800 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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IMSQ120R040M2HHXUMA1SIC DISCRETE Infineon Technologies |
4,351 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF7601TRMOSFET N-CH 20V 5.7A MICRO8 Infineon Technologies |
3,188 | - |
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Datasheet |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | - | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | - | 650 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro8™ |
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IPW65R041CFDFKSA1MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies |
3,578 | - |
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Datasheet |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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