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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GS-065-060-5-T-A-TRGS-065-060-5-T-A-TR Infineon Technologies Canada Inc. |
2,594 | - |
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- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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GS-065-060-5-B-A-TRGS-065-060-5-B-A-TR Infineon Technologies Canada Inc. |
4,523 | - |
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- |
- | 6-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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IMSQ120R012M2HHXUMA1SIC DISCRETE Infineon Technologies |
3,071 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMZHN120R010M1TXKSA1SIC_DISCRETE Infineon Technologies |
2,538 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 202A (Tc) | 18V, 20V | 11.3mOhm @ 93A, 20V | 5.1V @ 30mA | 178 nC @ 20 V | +23V, -5V | 5703 pF @ 800 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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GS-065-060-5-B-A-MRGS-065-060-5-B-A-MR Infineon Technologies Canada Inc. |
3,498 | - |
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- |
- | 6-SMD, No Lead | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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GS-065-060-5-T-A-MRGS-065-060-5-T-A-MR Infineon Technologies Canada Inc. |
4,765 | - |
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- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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F3L100R07W1H5FB67BPSA1EASY STANDARD Infineon Technologies |
3,775 | - |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF225R07W2S5PB97BPSA1EASY STANDARD Infineon Technologies |
4,365 | - |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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F433MR12W1M1HPB76BPSA1EASY STANDARD Infineon Technologies |
3,136 | - |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFM460MOSFET N-CH 500V 19A TO254AA Infineon Technologies |
3,587 | - |
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Datasheet |
HEXFET® | TO-254-3, TO-254AA (Straight Leads) | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 250W (Tc) | - | - | - | Through Hole | TO-254AA |
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