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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFL4310TRMOSFET N-CH 100V 1.6A SOT223 Infineon Technologies |
4,801 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.6A (Ta) | - | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | - | 330 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-223 |
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IRFP054NMOSFET N-CH 55V 81A TO247AC Infineon Technologies |
2,695 | - |
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Datasheet |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 81A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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GS-065-030-6-LT-MRGS-065-030-6-LT-MR Infineon Technologies Canada Inc. |
2,927 | - |
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- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGT60R042D1ATMA1GAN HV Infineon Technologies |
2,540 | - |
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CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
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IGOT60R042D1AUMA2GANFET N-CH Infineon Technologies |
4,858 | - |
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- |
- | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-87 |
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IGO60R042D1AUMA2GAN HV Infineon Technologies |
2,035 | - |
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- |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-85 |
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IRLL2705TRMOSFET N-CH 55V 3.8A SOT223 Infineon Technologies |
2,557 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.8A (Ta) | - | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48 nC @ 10 V | - | 870 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-223 |
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GS66508T-MRGS66508T-MR Infineon Technologies Canada Inc. |
2,318 | - |
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- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GS66508B-TRGS66508B-TR Infineon Technologies Canada Inc. |
4,743 | - |
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- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 6.1 nC @ 6 V | +7V, -10V | 242 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GS66508T-TRGS66508T-TR Infineon Technologies Canada Inc. |
2,757 | - |
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- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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