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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IGT40R070D1E8220ATMA1GAN N-CH 400V 31A HSOF-8-3 Infineon Technologies |
0 | - |
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Datasheet |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 400 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | ±10V | 382 pF @ 320 V | - | 125W (Tc) | 0°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
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IMSQ120R026M2HHXUMA1SIC DISCRETE Infineon Technologies |
0 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGLD60R190D1AUMA1GAN N-CH 600V 10A LSON-8 Infineon Technologies |
0 | - |
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Datasheet |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
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IPDQ60R015CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
0 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 149A (Tc) | 10V | 15mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 251 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 657W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IPT65R033G7XTMA1MOSFET N-CH 650V 69A 8HSOF Infineon Technologies |
0 | - |
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Datasheet |
CoolMOS™ C7 | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110 nC @ 10 V | ±20V | 5000 pF @ 400 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IGLD60R070D1AUMA1GANFET N-CH 600V 15A LSON-8 Infineon Technologies |
0 | - |
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Datasheet |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
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IGT60R070D1ATMA1GANFET N-CH 600V 31A 8HSOF Infineon Technologies |
0 | - |
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Datasheet |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
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IGOT60R070D1AUMA1GANFET N-CH 600V 31A 20DSO Infineon Technologies |
0 | - |
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Datasheet |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-87 |
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GS66516T-TRGS66516T-TR Infineon Technologies Canada Inc. |
0 | - |
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- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 1.3V @ 14mA | 12.1 nC @ 6 V | +7V, -10V | 520 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GS66516B-TRGS66516B-TR Infineon Technologies Canada Inc. |
0 | - |
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- | Die | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 1.3V @ 14mA | 12.1 nC @ 6 V | +7V, -10V | 520 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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