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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPT017N10NM5LF2ATMA1IPT017N10NM5LF2ATMA1 Infineon Technologies |
2,000 | - |
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Datasheet |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32A (Ta), 321A (Tc) | 10V, 15V | 1.6mOhm @ 150A, 15V | Surface Mount | 3.9V @ 280µA | 206 nC @ 10 V | 100 V | ±20V | 17000 pF @ 50 V | - | - | PG-HSOF-8-1 | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) |
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IMT65R083M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,726 | - |
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Datasheet |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | - | 18V | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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IPDQ60R037CM8XTMA1IPDQ60R037CM8XTMA1 Infineon Technologies |
750 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 65A (Tj) | 10V | 37mOhm @ 27A, 10V | Surface Mount | 4.7V @ 680µA | 79 nC @ 10 V | 600 V | ±20V | 3459 pF @ 400 V | - | - | PG-HDSOP-22 | - | 338W (Tc) | -55°C ~ 150°C (TJ) |
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IMDQ75R060M1HXUMA1IMDQ75R060M1HXUMA1 Infineon Technologies |
705 | - |
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Datasheet |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 15V, 20V | 55mOhm @ 11.1A, 20V | Surface Mount | 5.6V @ 4mA | 23 nC @ 18 V | 750 V | +20V, -2V | 779 pF @ 500 V | - | - | PG-HDSOP-22-1 | - | 167W (Tc) | -55°C ~ 175°C (TJ) |
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IPDQ60T040S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
750 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 12V | 40mOhm @ 13A, 12V | Surface Mount | 4.5V @ 780µA | 83 nC @ 12 V | 600 V | ±20V | 3128 pF @ 300 V | AEC-Q101 | - | PG-HDSOP-22-1 | Automotive | 272W (Tc) | -55°C ~ 150°C (TJ) |
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IMLT65R050M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
315 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB029N15NM6ATMA1TRENCH >=100V Infineon Technologies |
1,830 | - |
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Datasheet |
OptiMOS™ 6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Ta), 165A (Tc) | 8V, 15V | 2.8mOhm @ 100A, 15V | Surface Mount | 4V @ 276µA | 137 nC @ 10 V | 150 V | ±20V | 9900 pF @ 75 V | - | - | PG-TO263-3-2 | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) |
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GS-065-014-6-L-MRGS-065-014-6-L-MR Infineon Technologies Canada Inc. |
241 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | Surface Mount | 2.6V @ 3mA | 2.7 nC @ 6 V | 700 V | +7V, -10V | 85 pF @ 400 V | - | - | 8-PDFN (5x6) | - | - | -55°C ~ 150°C (TJ) |
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AIMBG75R060M1HXTMA1AIMBG75R060M1HXTMA1 Infineon Technologies |
2,497 | - |
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- |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tj) | 15V, 20V | 55mOhm @ 11.1A, 20V | Surface Mount | 5.6V @ 4mA | 23 nC @ 18 V | 750 V | +23V, -5V | 779 pF @ 500 V | AEC-Q101 | - | PG-TO263-7 | Automotive | 167W (Tc) | -55°C ~ 175°C (TJ) |
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IPZ60R060C7XKSA1MOSFET N-CH 600V 35A TO247-4 Infineon Technologies |
229 | - |
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Datasheet |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | Through Hole | 4V @ 800µA | 68 nC @ 10 V | 600 V | ±20V | 2850 pF @ 400 V | - | - | PG-TO247-4 | - | 162W (Tc) | -55°C ~ 150°C (TJ) |
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