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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPT65R040CFD7XTMA1MOSFET N-CH 650V 8HSOF Infineon Technologies |
2,000 | - |
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Datasheet |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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IMTA65R040M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
150 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IMT65R057M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,983 | - |
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Datasheet |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | - | 18V | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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AIMDQ75R060M1HXUMA1AUTOMOTIVE_SICMOS Infineon Technologies |
738 | - |
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CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 15V, 20V | 78mOhm @ 11.1A, 18V | Surface Mount | 5.6V @ 4mA | 23 nC @ 18 V | 750 V | +23V, -5V | 779 pF @ 500 V | AEC-Q101 | - | PG-HDSOP-22 | Automotive | 167W (Tc) | -55°C ~ 175°C (TJ) |
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IMBG120R034M2HXTMA1SIC DISCRETE Infineon Technologies |
980 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRF7669L2TRMOSFET N-CH 100V 19A DIRECTFET Infineon Technologies |
3,964 | - |
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Datasheet |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | Surface Mount | 5V @ 250µA | 120 nC @ 10 V | 100 V | ±20V | 5660 pF @ 25 V | - | - | DirectFET™ Isometric L8 | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
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IMDQ75R040M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
674 | - |
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Datasheet |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 47A (Tc) | 15V, 20V | 37mOhm @ 16.6A, 20V | Surface Mount | 5.6V @ 6mA | 34 nC @ 18 V | 750 V | +23V, -5V | 1135 pF @ 500 V | - | - | PG-HDSOP-22-1 | - | 211W (Tc) | -55°C ~ 175°C (TJ) |
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IMT65R048M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,942 | - |
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Datasheet |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | - | 18V | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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AIMZA75R060M1HXKSA1AUTOMOTIVE_SICMOS Infineon Technologies |
239 | - |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 32A (Tj) | 15V, 20V | 55mOhm @ 11.1A, 20V | Through Hole | 5.6V @ 4mA | 23 nC @ 18 V | 750 V | +23V, -5V | 779 pF @ 500 V | AEC-Q101 | - | PG-TO247-4 | Automotive | 144W (Tc) | -55°C ~ 175°C (TJ) |
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IPDQ65R029CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
734 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 10V | 29mOhm @ 35.8A, 10V | Surface Mount | 4.5V @ 1.79mA | 139 nC @ 10 V | 650 V | ±20V | 7149 pF @ 400 V | - | - | PG-HDSOP-22-1 | - | 463W (Tc) | -55°C ~ 150°C (TJ) |
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