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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6520KNZ4C13MOSFET N-CH 650V 20A TO247 Rohm Semiconductor |
334 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 231W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6030KNZC17MOSFET N-CH 600V 30A TO3PF Rohm Semiconductor |
300 | - |
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Datasheet |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 86W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6030KNZ4C13MOSFET N-CH 600V 30A TO247 Rohm Semiconductor |
584 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 305W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6535ENZC17MOSFET N-CH 650V 35A TO3 Rohm Semiconductor |
300 | - |
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Datasheet |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 4V @ 1.21mA | 110 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6020KNZ4C13MOSFET N-CH 600V 20A TO247 Rohm Semiconductor |
410 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 231W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT4062KRC151200V, 62M, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
4,925 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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R6035KNZ4C13MOSFET N-CH 600V 35A TO247 Rohm Semiconductor |
600 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 379W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6547ENZ4C13650V 47A TO-247, LOW-NOISE POWER Rohm Semiconductor |
324 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 80mOhm @ 25.8A, 10V | 4V @ 1.72mA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 480W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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R6025JNZ4C13MOSFET N-CH 600V 25A TO247G Rohm Semiconductor |
597 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57 nC @ 15 V | ±30V | 1900 pF @ 100 V | - | 306W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247G |
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SCT3105KW7TLSICFET N-CH 1200V 23A TO263-7 Rohm Semiconductor |
995 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 23A (Tc) | - | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 125W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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