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    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    MSCSM120DUM31TBL1NG

    MSCSM120DUM31TBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    4,426
    RFQ
    MSCSM120DUM31TBL1NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM31TBL1NG

    MSCSM120AM31TBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    2,597
    RFQ
    MSCSM120AM31TBL1NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM50T3AG

    MSCSM120HM50T3AG

    MOSFET 4N-CH 1200V 55A

    Microchip Technology

    3,711
    RFQ
    MSCSM120HM50T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M31C1AG

    MSCSM120VR1M31C1AG

    MOSFET 2N-CH 1200V 89A

    Microchip Technology

    2,765
    RFQ
    MSCSM120VR1M31C1AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DUM31CTBL1NG

    MSCSM120DUM31CTBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    3,690
    RFQ
    MSCSM120DUM31CTBL1NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM31CTBL1NG

    MSCSM120AM31CTBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    2,153
    RFQ
    MSCSM120AM31CTBL1NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM16T1AG

    MSCSM120AM16T1AG

    MOSFET 2N-CH 1200V 173A

    Microchip Technology

    3,699
    RFQ
    MSCSM120AM16T1AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DHM31CTBL2NG

    MSCSM120DHM31CTBL2NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    4,035
    RFQ
    MSCSM120DHM31CTBL2NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM31T3AG

    MSCSM120HM31T3AG

    MOSFET 4N-CH 1200V 89A

    Microchip Technology

    3,286
    RFQ
    MSCSM120HM31T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM31TBL2NG

    MSCSM120HM31TBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    2,197
    RFQ
    MSCSM120HM31TBL2NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
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