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    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    MSCSM120DDUM31TBL2NG

    MSCSM120DDUM31TBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    2,127
    RFQ
    MSCSM120DDUM31TBL2NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M16CT3AG

    MSCSM120VR1M16CT3AG

    MOSFET 2N-CH 1200V 173A

    Microchip Technology

    2,044
    RFQ
    MSCSM120VR1M16CT3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM31CTBL2NG

    MSCSM120HM31CTBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    4,843
    RFQ
    MSCSM120HM31CTBL2NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM31CTBL2NG

    MSCSM120DDUM31CTBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    4,077
    RFQ
    MSCSM120DDUM31CTBL2NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TAM31T3AG

    MSCSM120TAM31T3AG

    MOSFET 6N-CH 1200V 89A

    Microchip Technology

    3,858
    RFQ
    MSCSM120TAM31T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM11T3AG

    MSCSM120AM11T3AG

    MOSFET 2N-CH 1200V 254A

    Microchip Technology

    2,056
    RFQ
    MSCSM120AM11T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM16T3AG

    MSCSM120HM16T3AG

    MOSFET 4N-CH 1200V 173A

    Microchip Technology

    2,710
    RFQ
    MSCSM120HM16T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM08T3AG

    MSCSM120AM08T3AG

    MOSFET 2N-CH 1200V 337A

    Microchip Technology

    2,381
    RFQ
    MSCSM120AM08T3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 12mA 928nC @ 20V 12100pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70VR1M07CT6AG

    MSCSM70VR1M07CT6AG

    MOSFET 2N-CH 700V 349A

    Microchip Technology

    4,778
    RFQ
    MSCSM70VR1M07CT6AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M11CT6AG

    MSCSM120VR1M11CT6AG

    MOSFET 2N-CH 1200V 251A

    Microchip Technology

    2,741
    RFQ
    MSCSM120VR1M11CT6AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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