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    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification
    MSCSM70HM038AG

    MSCSM70HM038AG

    MOSFET 4N-CH 700V 464A

    Microchip Technology

    2,080
    RFQ
    MSCSM70HM038AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V - 18000pF @ 700V 1.277kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120VR1M062CT6AG

    MSCSM120VR1M062CT6AG

    MOSFET 2N-CH 1200V 420A

    Microchip Technology

    4,683
    RFQ
    MSCSM120VR1M062CT6AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V - 15100pF @ 1000V 1.753kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120HM063AG

    MSCSM120HM063AG

    MOSFET 4N-CH 1200V 333A

    Microchip Technology

    3,169
    RFQ
    MSCSM120HM063AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V - 12000pF @ 1000V 873W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120VR1M16CTPAG

    MSCSM120VR1M16CTPAG

    MOSFET 6N-CH 1200V 171A

    Microchip Technology

    2,799
    RFQ
    MSCSM120VR1M16CTPAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V - 6040pF @ 1000V 728W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120TAM11TPAG

    MSCSM120TAM11TPAG

    MOSFET 6N-CH 1200V 251A

    Microchip Technology

    2,051
    RFQ
    MSCSM120TAM11TPAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V - 9060pF @ 1000V 1.042kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM027T6AG

    MSCSM120AM027T6AG

    MOSFET 2N-CH 1200V 733A

    Microchip Technology

    3,788
    RFQ
    MSCSM120AM027T6AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V - 27000pF @ 1000V 2.97kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM027D3AG

    MSCSM120AM027D3AG

    MOSFET 2N-CH 1200V 733A

    Microchip Technology

    4,558
    RFQ
    MSCSM120AM027D3AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V - 27000pF @ 1000V 2.97kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM03T6LIAG

    MSCSM120AM03T6LIAG

    MOSFET 2N-CH 1200V 805A

    Microchip Technology

    3,434
    RFQ
    MSCSM120AM03T6LIAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V - 30200pF @ 1000V 3.215kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM02T6LIAG

    MSCSM120AM02T6LIAG

    MOSFET 2N-CH 1200V 947A

    Microchip Technology

    4,500
    RFQ
    MSCSM120AM02T6LIAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V - 36200pF @ 1000V 3.75kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM027CD3AG

    MSCSM120AM027CD3AG

    MOSFET 2N-CH 1200V 733A D3

    Microchip Technology

    1
    RFQ
    MSCSM120AM027CD3AG

    Datasheet

    - Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V - 27000pF @1000V 2.97kW (Tc) D3 -40°C ~ 175°C (TJ) Chassis Mount - -
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