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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP296NL6327HTSA1MOSFET N-CH 100V 1.2A SOT223-4 Infineon Technologies |
2,047 | - |
|
- |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | ±20V | 152.7 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT223-4 |
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IPC50R045CPX1SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,529 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IPC90R1K0C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,775 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC90R1K2C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,287 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC90R500C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,113 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC90R800C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,702 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SISC097N24DX1SA1TRANSISTOR P-CH BARE DIE Infineon Technologies |
4,172 | - |
|
- |
- | - | Bulk | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC302N08N3X2SA1MOSFET N-CH 80V SAWN WAFER Infineon Technologies |
4,751 | - |
|
- |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPD65R1K5CEAUMA1MOSFET N-CH 700V 5.2A TO252-3 Infineon Technologies |
3,239 | - |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPN70R1K0CEATMA1MOSFET N-CH 700V 7.4A SOT223 Infineon Technologies |
2,943 | - |
|
Datasheet |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.4A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
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