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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPS65R650CEAKMA1MOSFET N-CH 700V 10.1A TO251-3 Infineon Technologies |
2,999 | - |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPSA70R1K4CEAKMA1MOSFET N-CH 700V 5.4A TO251-3 Infineon Technologies |
4,165 | - |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPSA70R2K0CEAKMA1MOSFET N-CH 700V 4A TO251-3 Infineon Technologies |
3,826 | - |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8 nC @ 10 V | ±20V | 163 pF @ 100 V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPP80N07S405AKSA1MOSFET N-CH TO220-3 Infineon Technologies |
4,985 | - |
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- |
- | - | Tube | Active | - | - | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI120N04S4-01MMOSFET N-CH TO262-3 Infineon Technologies |
3,243 | - |
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Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPS70N10S3L-12MOSFET N-CH 1TO251-3 Infineon Technologies |
2,262 | - |
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- |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ITD50N04S4L04ATMA1MOSFET N-CH TO252-5 Infineon Technologies |
2,580 | - |
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- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA60R120P7E8191XKSA1MOSFET N-CH 600V TO220FP-3 Infineon Technologies |
4,114 | - |
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Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA60R125C6E8191XKSA1MOSFET N-CH TO220-3 Infineon Technologies |
4,828 | - |
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Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC60R070C6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,796 | - |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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