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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPP06N80C3XKMOSFET N-CH 800V 6A TO220-3 Infineon Technologies |
3,968 | - |
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- |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPP08N80C3XKMOSFET N-CH 800V 8A TO220-3 Infineon Technologies |
4,636 | - |
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- |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPW65R045C7300XKSA1MOSFET N-CH 650V 46A TO247 Infineon Technologies |
3,272 | - |
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- |
CoolMOS™ C7 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPLU300N04S4R7XTMA2MOSFET N-CH 40V 300A 8HSOF Infineon Technologies |
4,514 | - |
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- |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 0.76mOhm @ 100A, 10V | 4V @ 230µA | 287 nC @ 10 V | ±20V | 22945 pF @ 25 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
IPD350N06LGBUMA1MOSFET N-CH 60V 29A TO252-3 Infineon Technologies |
2,740 | - |
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- |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 2V @ 28µA | 13 nC @ 5 V | ±20V | 800 pF @ 30 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRL40T209ATMA1MOSFET N-CH 40V 300A 8HSOF Infineon Technologies |
2,756 | - |
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Datasheet |
StrongIRFET™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 100A, 10V | 2.4V @ 250µA | 269 nC @ 4.5 V | ±20V | 16000 pF @ 20 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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BSZ0945NDXTMA1TRENCH <= 40V Infineon Technologies |
4,237 | - |
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- |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD06P004NATMA1MOSFET P-CH 60V 16.4A TO252-3 Infineon Technologies |
3,369 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 60 V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFP22N50APBFXKMA1MOSFET N-CH 500V 22A TO247AC Infineon Technologies |
2,132 | - |
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Datasheet |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3450 pF @ 25 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRF830PBFMOSFET N-CH 500V 4.5A TO220AB Infineon Technologies |
4,556 | - |
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- |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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