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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT18F60BMOSFET N-CH 600V 19A TO247 Microchip Technology |
2,153 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 390mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 90 nC @ 10 V | 600 V | ±30V | 3550 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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APT7F100BMOSFET N-CH 1000V 7A TO247 Microchip Technology |
3,651 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | Through Hole | 5V @ 500µA | 58 nC @ 10 V | 1000 V | ±30V | 1800 pF @ 25 V | - | - | TO-247 [B] | - | 290W (Tc) | -55°C ~ 150°C (TJ) |
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APT9M100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
2,553 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2605 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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APT12M80BMOSFET N-CH 800V 13A TO247 Microchip Technology |
3,412 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 800mOhm @ 6A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 800 V | ±30V | 2470 pF @ 25 V | - | - | TO-247 [B] | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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APT11F80BMOSFET N-CH 800V 12A TO247 Microchip Technology |
2,275 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 800 V | ±30V | 2471 pF @ 25 V | - | - | TO-247 [B] | - | 337W (Tc) | -55°C ~ 150°C (TJ) |
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APT30N60BC6MOSFET N-CH 600V 30A TO247 Microchip Technology |
4,891 | - |
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Datasheet |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | Through Hole | 3.5V @ 960µA | 88 nC @ 10 V | 600 V | ±20V | 2267 pF @ 25 V | - | - | TO-247 [B] | - | 219W (Tc) | -55°C ~ 150°C (TJ) |
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MSC750SMA170SAMOSFET SIC 1700 V 750 MOHM D2PAK Microchip Technology |
4,199 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 6A (Tc) | 20V | 940mOhm @ 2.5A, 20V | Surface Mount | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | 1700 V | +23V, -10V | 184 pF @ 1000 V | - | - | D2PAK-7 | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
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APT9F100BMOSFET N-CH 1000V 9A TO247 Microchip Technology |
2,290 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | Through Hole | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2606 pF @ 25 V | - | - | TO-247 [B] | - | 337W (Tc) | -55°C ~ 150°C (TJ) |
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MSC360SMA120SAMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
2,016 | - |
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Datasheet |
- | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | - | 3.14V @ 250µA | 21 nC @ 20 V | 1200 V | +23V, -10V | 255 pF @ 1000 V | - | - | - | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
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APT23F60BMOSFET N-CH 600V 24A TO247 Microchip Technology |
2,161 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | Through Hole | 5V @ 1mA | 110 nC @ 10 V | 600 V | ±30V | 4415 pF @ 25 V | - | - | TO-247 [B] | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
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