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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC090SMA070SAMOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology |
3,480 | - |
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 25A (Tc) | 20V | 115mOhm @ 15A, 20V | Surface Mount | 2.4V @ 750µA | 38 nC @ 20 V | 700 V | +23V, -10V | 785 pF @ 700 V | - | - | TO-263-7 | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
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APT30F50SMOSFET N-CH 500V 30A D3PAK Microchip Technology |
3,227 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | Surface Mount | 5V @ 1mA | 115 nC @ 10 V | 500 V | ±30V | 4525 pF @ 25 V | - | - | D3PAK | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
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APT38N60BC6MOSFET N-CH 600V 38A TO247 Microchip Technology |
4,398 | - |
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Datasheet |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | Through Hole | 3.5V @ 1.2mA | 112 nC @ 10 V | 600 V | ±20V | 2826 pF @ 25 V | - | - | TO-247 [B] | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
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APT7M120SMOSFET N-CH 1200V 8A D3PAK Microchip Technology |
2,857 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1200 V | ±30V | 2565 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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APT18M80BMOSFET N-CH 800V 19A TO247 Microchip Technology |
2,783 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 120 nC @ 10 V | 800 V | ±30V | 3760 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
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MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
2,643 | - |
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- | TO-263-8, D2PAK (7 Leads + Tab) | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | Surface Mount | 3.26V @ 500µA | 34 nC @ 20 V | 1200 V | +23V, -10V | 510 pF @ 1000 V | - | - | D2PAK-7 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
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APT14M100BMOSFET N-CH 1000V 14A TO247 Microchip Technology |
3,273 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | Through Hole | 5V @ 1mA | 120 nC @ 10 V | 1000 V | ±30V | 3965 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
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APT17F80BMOSFET N-CH 800V 18A TO247 Microchip Technology |
4,035 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | Through Hole | 5V @ 1mA | 122 nC @ 10 V | 800 V | ±30V | 3757 pF @ 25 V | - | - | TO-247 [B] | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
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APT37F50SMOSFET N-CH 500V 37A D3PAK Microchip Technology |
2,045 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | Surface Mount | 5V @ 1mA | 145 nC @ 10 V | 500 V | ±30V | 5710 pF @ 25 V | - | - | D3PAK | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
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APT14M100SMOSFET N-CH 1000V 14A D3PAK Microchip Technology |
4,956 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 880mOhm @ 7A, 10V | Surface Mount | 5V @ 1mA | 120 nC @ 10 V | 1000 V | ±30V | 3965 pF @ 25 V | - | - | D3PAK | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
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