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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT5018BLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT6038BLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT5024SLLG/TRMOSFET N-CH 500V 22A D3PAK Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 43 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 265W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5018BFLLGMOSFET N-CH 500V 27A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT6038BFLLGMOSFET N-CH 600V 17A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT24M80BMOSFET N-CH 800V 25A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT22F80SMOSFET N-CH 800V 23A D3PAK Microchip Technology |
0 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT34N80B2C3GMOSFET N-CH 800V 34A T-MAX Microchip Technology |
0 | - |
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Datasheet |
- | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT34N80LC3GMOSFET N-CH 800V 34A TO264 Microchip Technology |
0 | - |
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Datasheet |
- | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT20M45BVRGMOSFET N-CH 200V 56A TO247 Microchip Technology |
0 | - |
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Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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