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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT10M09LVFRGMOSFET N-CH 100V 100A TO264 Microchip Technology |
4,426 | - |
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Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | - | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | - | 9875 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10078SLLGMOSFET N-CH 1000V 14A D3PAK Microchip Technology |
2,706 | - |
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Datasheet |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT8030LVFRGMOSFET N-CH 800V 27A TO264 Microchip Technology |
4,254 | - |
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Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT1201R4SFLLGMOSFET N-CH 1200V 9A D3PAK Microchip Technology |
4,989 | - |
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Datasheet |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT6013B2LLGMOSFET N-CH 600V 43A T-MAX Microchip Technology |
4,491 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT6013LLLGMOSFET N-CH 600V 43A TO264 Microchip Technology |
2,491 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT12080LVRGMOSFET N-CH 1200V 16A TO264 Microchip Technology |
3,644 | - |
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POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
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APT56F60B2MOSFET N-CH 600V 60A T-MAX Microchip Technology |
4,712 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT10050LVFRGMOSFET N-CH 1000V 21A TO264 Microchip Technology |
3,820 | - |
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Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX Microchip Technology |
3,258 | - |
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Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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