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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6011B2VRGMOSFET N-CH 600V 49A T-MAX Microchip Technology |
2,354 | - |
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Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | - | 110mOhm @ 24.5A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT20M18B2VFRGMOSFET N-CH 200V 100A T-MAX Microchip Technology |
4,607 | - |
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Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT10045LLLGMOSFET N-CH 1000V 23A TO264 Microchip Technology |
3,013 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT30M60JMOSFET N-CH 600V 31A ISOTOP Microchip Technology |
4,191 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 5890 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT1001R6BFLLGMOSFET N-CH 1000V 8A TO247 Microchip Technology |
2,424 | - |
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POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 5V @ 1mA | 55 nC @ 10 V | ±30V | 1320 pF @ 25 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT10045B2FLLGMOSFET N-CH 1000V 23A T-MAX Microchip Technology |
2,922 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT10045LFLLGMOSFET N-CH 1000V 23A TO264 Microchip Technology |
2,339 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT6010B2LLGMOSFET N-CH 600V 54A T-MAX Microchip Technology |
4,637 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 10V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | ±30V | 6710 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT38F50JMOSFET N-CH 500V 38A ISOTOP Microchip Technology |
4,745 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT8024LFLLGMOSFET N-CH 800V 31A TO264 Microchip Technology |
4,612 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 260mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | ±30V | 4670 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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