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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8020LLLGMOSFET N-CH 800V 38A TO264 Microchip Technology |
3,392 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10045B2LLGMOSFET N-CH 1000V 23A T-MAX Microchip Technology |
2,085 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT10035LLLGMOSFET N-CH 1000V 28A TO264 Microchip Technology |
2,161 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT58M50JMOSFET N-CH 500V 58A ISOTOP Microchip Technology |
4,275 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT20M22JVRMOSFET N-CH 200V 97A ISOTOP Microchip Technology |
2,717 | - |
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Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | - | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | - | 10200 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10035LFLLGMOSFET N-CH 1000V 28A TO264 Microchip Technology |
4,761 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | - | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | - | 5185 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10M11JVRU2MOSFET N-CH 100V 142A SOT227 Microchip Technology |
4,654 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10M11JVRU3MOSFET N-CH 100V 142A SOT227 Microchip Technology |
3,984 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10035B2FLLGMOSFET N-CH 1000V 28A T-MAX Microchip Technology |
3,959 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT20M22JVRU2MOSFET N-CH 200V 97A SOT227 Microchip Technology |
2,844 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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