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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6010LLLGMOSFET N-CH 600V 54A TO264 Microchip Technology |
4,007 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | - | 100mOhm @ 27A, 10V | Through Hole | 5V @ 2.5mA | 150 nC @ 10 V | 600 V | - | 6710 pF @ 25 V | - | - | TO-264 [L] | - | - | - |
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APT39M60JMOSFET N-CH 600V 42A ISOTOP Microchip Technology |
3,638 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | Chassis Mount | 5V @ 2.5mA | 280 nC @ 10 V | 600 V | ±30V | 11300 pF @ 25 V | - | - | ISOTOP® | - | 480W (Tc) | -55°C ~ 150°C (TJ) |
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APT20M20JLLMOSFET N-CH 200V 104A ISOTOP Microchip Technology |
4,522 | - |
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Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 104A (Tc) | - | 20mOhm @ 52A, 10V | Chassis Mount | 5V @ 2.5mA | 110 nC @ 10 V | 200 V | - | 6850 pF @ 25 V | - | - | ISOTOP® | - | - | - |
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APT39F60JMOSFET N-CH 600V 42A ISOTOP Microchip Technology |
2,168 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | Chassis Mount | 5V @ 2.5mA | 280 nC @ 10 V | 600 V | ±30V | 11300 pF @ 25 V | - | - | ISOTOP® | - | 480W (Tc) | -55°C ~ 150°C (TJ) |
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APT5010JLLU3MOSFET N-CH 500V 41A SOT227 Microchip Technology |
4,635 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | Chassis Mount | 5V @ 2.5mA | 96 nC @ 10 V | 500 V | ±30V | 4360 pF @ 25 V | - | - | SOT-227 | - | 378W (Tc) | -55°C ~ 150°C (TJ) |
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APT21M100JMOSFET N-CH 1000V 21A ISOTOP Microchip Technology |
4,903 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 380mOhm @ 16A, 10V | Chassis Mount | 5V @ 2.5mA | 260 nC @ 10 V | 1000 V | ±30V | 8500 pF @ 25 V | - | - | ISOTOP® | - | 462W (Tc) | -55°C ~ 150°C (TJ) |
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APT58M50JU2MOSFET N-CH 500V 58A SOT227 Microchip Technology |
4,250 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | Chassis Mount | 5V @ 2.5mA | 340 nC @ 10 V | 500 V | ±30V | 10800 pF @ 25 V | - | - | SOT-227 | - | 543W (Tc) | -40°C ~ 150°C (TJ) |
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APT58M50JU3MOSFET N-CH 500V 58A SOT227 Microchip Technology |
4,541 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | Chassis Mount | 5V @ 2.5mA | 340 nC @ 10 V | 500 V | ±30V | 10800 pF @ 25 V | - | - | SOT-227 | - | 543W (Tc) | -40°C ~ 150°C (TJ) |
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APT19F100JMOSFET N-CH 1000V 20A ISOTOP Microchip Technology |
3 | - |
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Datasheet |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 440mOhm @ 16A, 10V | Chassis Mount | 5V @ 2.5mA | 260 nC @ 10 V | 1000 V | ±30V | 8500 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | -55°C ~ 150°C (TJ) |
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APT6010B2FLLGMOSFET N-CH 600V 54A T-MAX Microchip Technology |
4,900 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | - | 100mOhm @ 27A, 10V | Through Hole | 5V @ 2.5mA | 150 nC @ 10 V | 600 V | - | 6710 pF @ 25 V | - | - | T-MAX™ [B2] | - | - | - |
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