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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TP2535N3-GMOSFET P-CH 350V 86MA TO92-3 Microchip Technology |
678 | - |
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Datasheet |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TP2435N8-GMOSFET P-CH 350V 231MA TO243AA Microchip Technology |
3,903 | - |
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Datasheet |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 231mA (Tj) | 3V, 10V | 15Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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MSC360SMA120SMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
205 | - |
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Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APT60M75L2LLGMOSFET N-CH 600V 73A 264 MAX Microchip Technology |
210 | - |
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Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
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MSC035SMA070BMOSFET N-CH 700V TO247 Microchip Technology |
85 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99 nC @ 20 V | +25V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC035SMA170BMOSFET SIC 1700 V 45 MOHM TO-247 Microchip Technology |
37 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -60°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC040SMA120JSICFET N-CH 1200V 53A SOT227 Microchip Technology |
50 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSC035SMA170B4MOSFET SIC 1700V 35 MOHM TO-247- Microchip Technology |
90 | - |
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Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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APT50M65JFLLMOSFET N-CH 500V 58A ISOTOP Microchip Technology |
53 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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MSC130SM120JCU2SICFET N-CH 1.2KV 173A SOT227 Microchip Technology |
3 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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