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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT40M70JVRMOSFET N-CH 400V 53A SOT227 Microchip Technology |
40 | - |
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POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | Chassis Mount | 4V @ 2.5mA | 495 nC @ 10 V | 400 V | ±30V | 8890 pF @ 25 V | - | - | SOT-227 (ISOTOP®) | - | 450W (Tc) | -55°C ~ 150°C (TJ) |
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APT10045JLLMOSFET N-CH 1000V 21A ISOTOP Microchip Technology |
20 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | Chassis Mount | 5V @ 2.5mA | 154 nC @ 10 V | 1000 V | ±30V | 4350 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | -55°C ~ 150°C (TJ) |
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MSC100SM70JCU2SICFET N-CH 700V 124A SOT227 Microchip Technology |
8 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | Chassis Mount | 2.4V @ 4mA | 215 nC @ 20 V | 700 V | +25V, -10V | 4500 pF @ 700 V | - | - | SOT-227 (ISOTOP®) | - | 365W (Tc) | -55°C ~ 150°C (TJ) |
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APT60M60JFLLMOSFET N-CH 600V 70A ISOTOP Microchip Technology |
10 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | Chassis Mount | 5V @ 5mA | 289 nC @ 10 V | 600 V | ±30V | 12630 pF @ 25 V | - | - | ISOTOP® | - | 694W (Tc) | -55°C ~ 150°C (TJ) |
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APT30F50BMOSFET N-CH 500V 30A TO247 Microchip Technology |
95 | - |
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Datasheet |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | Through Hole | 5V @ 1mA | 115 nC @ 10 V | 500 V | ±30V | 4525 pF @ 25 V | - | - | TO-247 [B] | - | 415W (Tc) | -55°C ~ 150°C (TJ) |
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APT9M100SMOSFET N-CH 1000V 9A D3PAK Microchip Technology |
47 | - |
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Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | Surface Mount | 5V @ 1mA | 80 nC @ 10 V | 1000 V | ±30V | 2605 pF @ 25 V | - | - | D3PAK | - | 335W (Tc) | -55°C ~ 150°C (TJ) |
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MSC080SMA120B4SICFET N-CH 1200V 37A TO247-4 Microchip Technology |
94 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | Through Hole | 2.8V @ 1mA | 64 nC @ 20 V | 1200 V | +23V, -10V | 838 pF @ 1000 V | - | - | TO-247-4 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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MSC060SMA070BSICFET N-CH 700V 39A TO247-3 Microchip Technology |
79 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | Through Hole | 2.4V @ 1mA | 56 nC @ 20 V | 700 V | +23V, -10V | 1175 pF @ 700 V | - | - | TO-247-3 | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
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MSC060SMA070SSICFET N-CH 700V 37A D3PAK Microchip Technology |
92 | - |
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Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | Surface Mount | 2.4V @ 1mA (Typ) | 56 nC @ 20 V | 700 V | +23V, -10V | 1175 pF @ 700 V | - | - | D3PAK | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
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APT1204R7BFLLGMOSFET N-CH 1200V 3.5A TO247 Microchip Technology |
43 | - |
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Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | Through Hole | 5V @ 1mA | 31 nC @ 10 V | 1200 V | ±30V | 715 pF @ 25 V | - | - | TO-247 [B] | - | 135W (Tc) | -55°C ~ 150°C (TJ) |
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