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    Goford Semiconductor 18N20J

    Part No.:
    18N20J
    Manufacturer:
    Goford Semiconductor
    Category:
    FETs, MOSFETs
    Package:
    TO-251-3 Short Leads, IPAK, TO-251AA
    Datasheet:
    KATY Electronic Technology Co., LTD18N20J.pdf
    Description:
    N200V, 18A,RD<0.16@10V,VTH1V~3V,
    Quantity:
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
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    Product attributes
    Attribute value
    Manufacturer:
    Goford Semiconductor
    Series:
    TrenchFET®
    Package/Case:
    TO-251-3 Short Leads, IPAK, TO-251AA
    Packaging:
    Tube
    Part Status:
    Active
    FET Type:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    Current - Continuous Drain (Id) @ 25°C:
    18A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    10V
    Rds On (Max) @ Id, Vgs:
    160mOhm @ 9A, 10V
    Mounting Style:
    Through Hole
    Vgs(th) (Max) @ Id:
    3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    17.7 nC @ 10 V
    Drain to Source Voltage (Vdss):
    200 V
    Vgs (Max):
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds:
    836 pF @ 25 V
    Qualification:
    -
    FET Feature:
    -
    Supplier Device Package:
    TO-251
    Grade:
    -
    Power Dissipation (Max):
    65.8W (Tc)
    Operating Temperature:
    -55°C ~ 150°C (TJ)

    1. How to order 18N20J on KATY Electronic Technology Co., LTD?

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    2. How does KATY Electronic Technology Co., LTD guarantee that 18N20J is from the original manufacturer or authorized agents?

    We have a professional and experienced quality control team to strictly verify and test the 18N20J. All suppliers must pass our qualification reviews before they can publish their products including 18N20J on KATY Electronic Technology Co., LTD; we pay more attention to the channels and quality of 18N20J products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

    3. Are the 18N20J price and inventory displayed accurate?

    The price and inventory of 18N20J fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

    4. What forms of payment are accepted?

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    Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of 18N20J?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 18N20J we delivered, we will accept the replacement or return of the 18N20J only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of 18N20J.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as 18N20J pin diagram, 18N20J datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Image 18N20J 18N20J
    Part Number 18N20J 18N20J
    Manufacturer Goford Semiconductor Goford Semiconductor
    Series TrenchFET® TrenchFET®
    Package/Case TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPAK, TO-251AA
    Packaging Tube Tube
    Part Status Active Active
    FET Type N-Channel N-Channel
    Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
    Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V 10V
    Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V 160mOhm @ 9A, 10V
    Mounting Style Through Hole Through Hole
    Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 10 V -
    Drain to Source Voltage (Vdss) 200 V -
    Vgs (Max) ±30V ±30V
    Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 25 V -
    Qualification - -
    FET Feature - -
    Supplier Device Package TO-251 TO-251
    Grade - -
    Power Dissipation (Max) 65.8W (Tc) 65.8W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
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    Inventory:130

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