What is the Packaging

semiconductor package is a shell that encases and protects semiconductor components or integrated circuits, made from metal, plastic, glass, or ceramic.

What is the Max Output Voltage

The maximum output voltage refers to the dynamic area beyond which the output is saturated in the positive or negative direction, and is limited according to the load resistance value.

What is the Terminal Pitch

The center distance from one pole to the next.

What is the Terminal Form

Occurring at or forming the end of a series.

What is the Additional Feature ?

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Goford Semiconductor G3K8N15HE

Name: G3K8N15HE
Brand: Goford Semiconductor
SKU: G3K8N15HE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: G3K8N15HE

Manufacturer:: Goford Semiconductor

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: G3K8N15HE.pdf

Description:: MOSFET N-CH ESD 150V 2A SOT-223

Quantity:: RFQ Add To RFQ list

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Product attributes: Attribute value

Manufacturer:: Goford Semiconductor

Series:: TrenchFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Cut Tape (CT)

Part Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 370mOhm @ 2A, 10V

Mounting Style:: Surface Mount

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Drain to Source Voltage (Vdss):: 150 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 558 pF @ 75 V

Qualification:: -

FET Feature:: -

Supplier Device Package:: SOT-223

Grade:: -

Power Dissipation (Max):: 2.16W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

1. How to order G3K8N15HE on KATY Electronic Technology Co., LTD?

Currently, KATY Electronic Technology Co., LTD only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does KATY Electronic Technology Co., LTD guarantee that G3K8N15HE is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the G3K8N15HE. All suppliers must pass our qualification reviews before they can publish their products including G3K8N15HE on KATY Electronic Technology Co., LTD; we pay more attention to the channels and quality of G3K8N15HE products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the G3K8N15HE price and inventory displayed accurate?

The price and inventory of G3K8N15HE fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of G3K8N15HE?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G3K8N15HE we delivered, we will accept the replacement or return of the G3K8N15HE only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3K8N15HE.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G3K8N15HE pin diagram, G3K8N15HE datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image
Part Number	G3K8N15HE	G3K8N15HE
Manufacturer	Goford Semiconductor	Goford Semiconductor
Series	TrenchFET®	-
Package/Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Packaging	Cut Tape (CT)	Tape & Reel (TR)
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	370mOhm @ 2A, 10V	370mOhm @ 2A, 10V
Mounting Style	Surface Mount	Surface Mount
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V	20 nC @ 10 V
Drain to Source Voltage (Vdss)	150 V	150 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	558 pF @ 75 V	558 pF @ 75 V
Qualification	-	-
FET Feature	-	-
Supplier Device Package	SOT-223	SOT-223
Grade	-	-
Power Dissipation (Max)	2.16W (Tc)	2.16W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)