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    onsemi NVH4L022N120M3S

    Part No.:
    NVH4L022N120M3S
    Manufacturer:
    onsemi
    Category:
    FETs, MOSFETs
    Package:
    TO-247-4
    Datasheet:
    KATY Electronic Technology Co., LTDNVH4L022N120M3S.pdf
    Description:
    SIC MOS TO247-4L 22MOHM 1200V
    Quantity:
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

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    Attribute value
    Manufacturer:
    onsemi
    Series:
    -
    Package/Case:
    TO-247-4
    Packaging:
    Tube
    Product Status:
    Active
    FET Type:
    N-Channel
    Technology:
    SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss):
    1200 V
    Current - Continuous Drain (Id) @ 25°C:
    68A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    18V
    Rds On (Max) @ Id, Vgs:
    30mOhm @ 40A, 18V
    Vgs(th) (Max) @ Id:
    4.4V @ 20mA
    Gate Charge (Qg) (Max) @ Vgs:
    151 nC @ 18 V
    Vgs (Max):
    +22V, -10V
    Input Capacitance (Ciss) (Max) @ Vds:
    3175 pF @ 800 V
    FET Feature:
    -
    Power Dissipation (Max):
    352W (Tc)
    Operating Temperature:
    -55°C ~ 175°C (TJ)
    Grade:
    Automotive
    Qualification:
    AEC-Q101
    Mounting Type:
    Through Hole
    Supplier Device Package:
    TO-247-4L

    1. How to order NVH4L022N120M3S on KATY Electronic Technology Co., LTD?

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    2. How does KATY Electronic Technology Co., LTD guarantee that NVH4L022N120M3S is from the original manufacturer or authorized agents?

    We have a professional and experienced quality control team to strictly verify and test the NVH4L022N120M3S. All suppliers must pass our qualification reviews before they can publish their products including NVH4L022N120M3S on KATY Electronic Technology Co., LTD; we pay more attention to the channels and quality of NVH4L022N120M3S products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

    3. Are the NVH4L022N120M3S price and inventory displayed accurate?

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    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of NVH4L022N120M3S?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NVH4L022N120M3S we delivered, we will accept the replacement or return of the NVH4L022N120M3S only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of NVH4L022N120M3S.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as NVH4L022N120M3S pin diagram, NVH4L022N120M3S datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Image NVH4L022N120M3S
    Part Number NVH4L022N120M3S
    Manufacturer onsemi
    Series -
    Package/Case TO-247-4
    Packaging Tube
    Product Status Active
    FET Type N-Channel
    Technology SiCFET (Silicon Carbide)
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 68A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 18V
    Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
    Vgs(th) (Max) @ Id 4.4V @ 20mA
    Gate Charge (Qg) (Max) @ Vgs 151 nC @ 18 V
    Vgs (Max) +22V, -10V
    Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 800 V
    FET Feature -
    Power Dissipation (Max) 352W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Grade Automotive
    Qualification AEC-Q101
    Mounting Type Through Hole
    Supplier Device Package TO-247-4L
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    • NVH4L022N120M3S Datasheet
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